Spin relaxation due to electron–electron magnetic interaction in high Lande g-factor semiconductors
نویسندگان
چکیده
منابع مشابه
A unified theory of spin-relaxation due to spin-orbit coupling in metals and semiconductors
Spintronics is an emerging paradigm with the aim to replace conventional electronics by using electron spins as information carriers. Its utility relies on the magnitude of the spin-relaxation, which is dominated by spin-orbit coupling (SOC). Yet, SOC induced spin-relaxation in metals and semiconductors is discussed for the seemingly orthogonal cases when inversion symmetry is retained or broke...
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A theory is introduced for spin relaxation and spin diffusion of hopping carriers in a disordered system. For disorder described by a distribution of waiting times between hops (e.g., from multiple traps, site-energy disorder, and/or positional disorder) the dominant spin relaxation mechanisms in organic semiconductors (hyperfine, hopping-induced spin-orbit, and intrasite spin relaxation) each ...
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Despite the great interest organic spintronics has recently attracted, there is only a partial understanding of the fundamental physics behind electron spin relaxation in organic semiconductors. Mechanisms based on hyperfine interaction have been demonstrated, but the role of the spin-orbit interaction remains elusive. Here, we report muon spin spectroscopy and time-resolved photoluminescence m...
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We study zero-bias spin separation in (Cd,Mn)Te/(Cd,Mg)Te diluted magnetic semiconductor structures. The spin current generated by electron gas heating under terahertz radiation is converted into a net electric current by applying an external magnetic field. The experiments show that the spin polarization of the magnetic ion system enhances drastically the conversion process due to giant Zeeman...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2010
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.3481063